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SPECIFICATION
Device Name Type Name Spec. No.
: : :
Power Integrated Module 7MBR100U4B120 MS6M 0856
Feb. 02 '05 Feb. 02 '05
S.Miyashita M.W atanabe Y.Seki
K.Yamada
MS6M0856
1
15
H04-004-07b
Revised
Date Classification Ind. Content
Records
Applied date Issued date Drawn Checked Checked Approved
Feb.-02 -'05
Enactment
M.W atanabe K.Yamada
Y.Seki
MS6M0856
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H04-004-06b
7MBR100U4B120
1. Outline Drawing ( Unit : mm )
LABEL
(
shows theoretical dimension. ) shows reference dimension.
2. Equivalent circuit
[ Converter ]
21(P)
[ Brake ]
22(P1)
[ Inverter ]
[ Thermistor ]
8 20 (Gu) 1(R) 2(S) 3(T) 7(B) 19(Eu) 18 (Gv) 17(Ev) 4(U) 16 (Gw) 15(Ew) 5(V)
9
6(W)
14(Gb) 23(N) 24(N1)
13(Gx)
12(Gy)
11(Gz) 10(En)
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3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Continuous 1ms Tc=25C Tc=80C Tc=25C Tc=80C Conditions Maximum Ratings 1200 20 100 75 200 150 100 200 390 1200 20 50 35 100 70 205 1200 1600 50Hz/60Hz A Units V V
Inverter
Collector current
Icp -Ic -Ic pulse Pc VCES VGES Ic
A
Collector Power Dissipation Collector-Emitter voltage Gate-Emitter voltage
1ms 1 device
W V V
Brake
Continuous 1ms 1 device
Tc=25C Tc=80C Tc=25C Tc=80C
Collector current Icp Collector Power Dissipation Repetitive peak reverse Voltage (Diode) Repetitive peak reverse Voltage Pc VRRM VRRM Io IFSM It Tj Tstg Viso 2
W V V A A A2s C VAC Nm
Converter
Average Output Current Surge Current (Non-Repetitive)
2
sine wave
Tj=150C, 10ms half sine wave
100 520 1352 150 -40 ~ +125 2500 3.5
It (Non-Repetitive) Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Screw Torque Mounting (*3)
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done. (*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5)
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4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Symbols
ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM VFM IRRM R B
Conditions
VGE = 0V VCE = 1200V VCE = 0V VGE=20V VCE = 20V Ic = 100mA Tj= 25C Tj=125C Tj= 25C Ic = 100A Tj=125C VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 100A VGE=15V Rg = 9.1 VGE=15V Tj= 25C Tj=125C Tj= 25C Tj=125C
Characteristics min. typ. max.
4.5 6.5 2.60 2.95 2.10 2.45 8 0.38 0.13 0.03 0.41 0.07 2.60 2.90 2.10 2.40 2.25 2.60 2.00 2.35 0.53 0.43 0.37 0.07 1.55 1.40 5000 495 3375 1.0 200 8.5 2.85 2.35 1.20 0.60 1.00 0.30 2.85 2.35 0.35 1.0 200 2.65 2.40 1.20 0.60 1.00 0.30 1.0 1.90 1.0 520 3450
Units
mA nA V
V
Inverter
Input capacitance Turn-on time
nF
s
Turn-off time
VGE=0V IF = 100A IF = 100A VGE = 0V VCE = 1200V VCE = 0V VGE=20V VGE=15V Ic = 50A Vcc = 600V Ic = 50A VGE=15V Rg = 33 VR=1200V VGE=0V IF = 100A VR=1600V T = 25C T =100C T = 25/50C
Forward on voltage
V
Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
s mA nA
Tj= 25C Tj=125C Tj= 25C Tj=125C
Turn-on time Turn-off time Reverse current
Converter
Forward on voltage Reverse current Resistance B value
terminal chip
465 3305
Brake
V
s
mA V mA K
Thermistor
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5. Thermal resistance characteristics Items Symbols Conditions
Inverter IGBT Thermal resistance(1device) Rth(j-c) Inverter FWD Brake IGBT Converter Diode Contact Thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound
Characteristics min. typ. max.
0.05 0.32 0.58 0.60 0.50 -
Units
C/W
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module Logo of production
7MBR100U4B120
100A 1200V
Lot.No. 7.Applicable category
Place of manufacturing (code)
This specification is applied to Power Integrated Module named 7MBR100U4B120 .
8.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time

90%
0V
L
0V VGE tr r Ir r
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr ( i ) tr to n to f f

Ic
10%
10%
VCE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
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11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
(Aug.-2001 edition)
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Solder temp. : 2605 Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Mechanical Tests
Test Method 404 Condition code B
5
(0:1)
Test Method 303 Condition code A
5
(0:1)
Test Method 302 Condition code A
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(0:1)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (0:1)
(Aug.-2001 edition)
Test Method 101
Test temp. Bias Voltage Bias Method
Endurance Tests Tests Endurance
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(0:1)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(0:1)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(0:1)
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV Note
Electrical Leakage current ICES characteristic IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others
USLx1.2 Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
1 Terminal Strength (Pull test) 2 Mounting Strength
5 5 5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 * 0 0 0
Mechanical Tests Environment Tests
3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock
1 High temperature Reverse Bias Test Method 101
5 5 5 5
* 0 * 0
Endurance Tests
2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
* under confirmation
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[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
200
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
200
VGE=20V 15V
12V
VGE=20V 15V
12V
Collector current : Ic [A]
100 10V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
150
150
100 10V
50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
[ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
200
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
Collector current : Ic [A]
150
Tj=25C Tj=125C
Collector - Emitter voltage : VCE [ V ]
8
6
100
4 Ic=150A Ic=75A Ic=37.5A
50
2
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
100.0
[ Inverter ] Dynamic Gate charge (typ.) Vcc=600V Ic=100ATj= 25C
Capacitance : Cies, Coes, Cres [ nF ]
VGE
10.0
Cies
1.0
Cres Coes
0.1 0 10 20 30 Collector-Emitter voltage : VCE [V]
0
0 100 200
VCE 300 400
Gate charge : Qg [nC]
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[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25C
10000 10000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj=125C
Switching time : ton, tr, toff, tf [ nsec ]
1000 toff ton 100
Switching time : ton, tr, toff, tf [ nsec ]
1000 ton toff tr 100 tf
tr tf
10 0 50 100 150 Collector current : Ic [A]
10 0 50 100 150 Collector current : Ic [A]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=15V, Tj= 25C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
10000 14 12 10 8 6 4 2 0 1 10 100 1000 0 50
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1
Eon(125C) Eon(25C) Eoff(125C)
Switching time : ton, tr, toff, tf [ nsec ]
1000 tr
ton toff
Err(125C) Eoff(25C) Err(25C)
100 tf
10 Gate resistance : Rg []
100
150
Collector current : Ic [A]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=15V, Tj= 125C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
40 Eon
[ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C
250
Collector current : Ic [A]
1000
30
200
150
20 Eoff 10
100
50 Err
0 1 10 100 Gate resistance : Rg []
0 0 400 800 1200 Collector-Emitter voltage : VCE [V]
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[ Inverter ] Forward current vs. Forward on voltage (typ.) chip
120 100 Tj=25C Tj=125C 1000
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1
80 60 40 20 0 0 1 2
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
Forward current : IF [A]
trr (125C) 100 trr (25C) Irr (125C) Irr (25C)
10 3 4 0 25 50 75 100 125 Forward on voltage : VF [V] Forward current : IF [A]
[ Converter ] Forward current vs. Forward on voltage (typ.) chip
120 100 Tj=25C
Forward current : IF [A]
80 Tj=125C 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 Forward on voltage : VFM [V]
[ Thermistor ] Transient thermal resistance (max.)
1.000 100
IGBT[Brake] FW D[Inverter] Conv. Diode
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
Resistance : R [k]
IGBT[Inverter]
10
0.100
1
0.010 0.001
0.1 0.010 0.100 1.000
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [sec]
Temperature [C ]
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[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip
80 70 VGE=20V 15V 12V
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip
80 70 VGE=20V 15V 12V
Collector current : Ic [A]
50 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V 10V
Collector current : Ic [A]
60
60 50 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V 10V
[ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip
80 70 Tj=25C
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip
10
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [A]
60 50 40 30 20 10 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Tj=125C
8
6
4 Ic=70A Ic=35A Ic=17.5A
2
0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ]
10.0
[ Brake ] Dynamic Gate charge (typ.) Vcc=600V Ic=50ATj= 25C
Capacitance : Cies,Coes,Cres [nF]
Cies
VGE
1.0
Cres
Coes 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V]
0
0 50 100
VCE 150 200
Gate charge : Qg [nC]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg. Tstg Tstg - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - When electric power is connected to equipments, rush current will be flown through rectifying diode to charge 2 DC capacitor. Guaranteed value of the rush current is specified as I t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. 2 2 I t()I t - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA
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Warnings
- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,please apply after confirmation of this product to be satisfied about system construction and required reliability.
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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